Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

被引：35

作者：

Sorensen, BS

Lindelof, PE

Sadowski, J

Mathieu, R

Svedlindh, P

机构：

[1] Univ Copenhagen, Niels Bohr Inst fAFG, Orsted Lab, DK-2100 Copenhagen, Denmark

[2] Lund Univ, Max Lab, SE-22100 Lund, Sweden

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Uppsala Univ, Dept Mat Sci, SE-75121 Uppsala, Sweden

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 14期

关键词：

D O I：

10.1063/1.1566097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin. (C) 2003 American Institute of Physics.

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页码：2287 / 2289

页数：3

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