Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100)

被引：393

作者：

Jiang, X ^{[1
]}

Wang, R

Shelby, RM

Macfarlane, RM

Bank, SR

Harris, JS

Parkin, SSP

机构：

[1] IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA

[2] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 94卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.94.056601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The spin polarization of current injected into GaAs from a CoFe/MgO(100) tunnel injector is inferred from the electroluminescence polarization from GaAs/AlGaAs quantum well detectors. The polarization reaches 57% at 100 K and 47% at 290 K in a 5 T perpendicular magnetic field. Taking into account the field dependence of the luminescence polarization, the spin injection efficiency is at least 52% at 100 K, and 32% at 290 K. We find a nonmonotonic temperature dependence of the polarization which can be attributed to spin relaxation in the quantum well detectors.

引用

页数：4

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