Piezoelectric KNbO3 films for SAW device applications

被引：8

作者：

Yamanouchi, K

Odagawa, H

Kojima, T

Onoe, A

Yoshida, A

Chikuma, K

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 98077, Japan

[2] Pioneer Elect Corp, Tsuruga, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 07期

关键词：

D O I：

10.1049/el:19980475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

KNbO3 films have been deposited on STO (SrTiO3) substrate using MOCVD techniques. The as-grown films are sufficiently piezoelectric to fabricate SAW devices. The experimental result show electromechanical coupling coefficients (K-2) of 0.021 at the centre frequency of 960 MHz and lambda/h = 0.24 (lambda = SAW wavelength. h = KNbO3 film thickness). These values are in fairly good agreement with theoretical values calculated using the piezoelectric constants of single crystals.

引用

页码：702 / 703

页数：2