Positive magnetoresistance in quasi-one-dimensional conductors

被引:4
作者
Martin, I [1 ]
Phillips, P [1 ]
机构
[1] Univ Illinois, Loomis Lab Phys, Urbana, IL 61801 USA
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 23期
关键词
D O I
10.1103/PhysRevB.56.14883
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present here a simple qualitative model that interpolates between the high-and low-temperature properties of quasi-one-dimensional conductors. At high temperatures we argue that transport is governed by inelastic scattering while at low temperatures the conductance decays exponentially with the electron dephas ing length. The crossover between these regimes occurs at the temperature at which the elastic and inelastic scattering times become equal. This model is shown to be in quantitative agreement with the organic conductor TTT2I3-delta. Within this model, we also show that on the insulating side, the positive magnetoresistance of the form (H/T)(2) observed in TTT2I3-delta and other quasi-one-dimensional conductors can be explained by the role spin-flip scattering plays in the electron dephasing rate.
引用
收藏
页码:14883 / 14885
页数:3
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