Bending of dislocations in GaN during epitaxial lateral overgrowth

被引:70
作者
Gradecak, S [1 ]
Stadelmann, P
Wagner, V
Ilegems, M
机构
[1] Ecole Polytech Fed Lausanne, Ctr Interdisciplinaire Microscopie Elect, CH-1015 Lausanne, Switzerland
[2] Ecole Polytech Fed Lausanne, Inst Photon & Elect Quant, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1063/1.1823593
中图分类号
O59 [应用物理学];
学科分类号
摘要
Bending of dislocations in GaN during epitaxial lateral overgrowth (ELO) has been experimentally studied using transmission electron microscopy. The orientational dependence of the dislocation energy factor K has been calculated on the basis of anisotropic elasticity theory for different types of perfect dislocation in GaN. Image forces act on dislocations during the growth and dislocations bend to achieve the minimum energy. Bending behavior depends on a dislocation type and we show that the measured bending angles correspond to the calculated energy minima. The results allow us to quantitatively discuss the most advantageous ELO GaN mask direction for the largest dislocation density reduction. (C) 2004 American Institute of Physics.
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页码:4648 / 4650
页数:3
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