Switching stability of magnetic tunnel junctions with an artificial antiferromagnet

被引：16

作者：

Schmalhorst, J

Brückl, H

Reiss, G

Kinder, R

Gieres, G

Wecker, J

机构：

[1] Univ Bielefeld, Fac Phys, Nano Device Grp, D-33501 Bielefeld, Germany

[2] Siemens AG, Zent Tech ZT MFI, D-91050 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 21期

关键词：

D O I：

10.1063/1.1327272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Avoiding fatigue in the switching of magnetic tunnel junctions is crucial for their long-term use in nonvolatile magnetic memories. We compare the switching stability of two types of junctions with different soft layers: Fe or Ni81Fe19, both with Co dusting at the barrier interface. The magnetically hard electrode is a Co/Cu/Co artificial antiferromagnet. While the tunneling magnetoresistance (TMR) remains unchanged after 10(4) cycles in a 4 kA/m rotating field, it decreases by more than 45% due to uniaxial switching. Fringing fields of domain walls in the soft layer and an intrinsic instability of Co/Cu/Co are identified as the main reasons. Magnetization reversal by two perpendicular switching pulses avoids this magnetic degradation and maintains a full TMR signal. (C) 2000 American Institute of Physics. [S0003-6951(00)01447-9].

引用

收藏

页码：3456 / 3458

页数：3

相关论文

共 10 条

[1] The magnetic stability of spin-dependent tunneling devices [J].

Gider, S ;

Runge, BU ;

Marley, AC ;

Parkin, SSP .

SCIENCE, 1998, 281 (5378) :797-799

[2] Origin of magnetization decay in spin-dependent tunnel junctions [J].

McCartney, MR ;

Dunin-Borkowski, RE ;

Scheinfein, MR ;

Smith, DJ ;

Gider, S ;

Parkin, SSP .

SCIENCE, 1999, 286 (5443) :1337-1340

[3] Interface magnetism and spin wave scattering in ferromagnet-insulator-ferromagnet tunnel junctions [J].

Moodera, JS ;

Nowak, J ;

van de Veerdonk, RJM .

PHYSICAL REVIEW LETTERS, 1998, 80 (13) :2941-2944

[4] LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS [J].

MOODERA, JS ;

KINDER, LR ;

WONG, TM ;

MESERVEY, R .

PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3273-3276

[5] Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) [J].

Parkin, SSP ;

Roche, KP ;

Samant, MG ;

Rice, PM ;

Beyers, RB ;

Scheuerlein, RE ;

O'Sullivan, EJ ;

Brown, SL ;

Bucchigano, J ;

Abraham, DW ;

Lu, Y ;

Rooks, M ;

Trouilloud, PL ;

Wanner, RA ;

Gallagher, WJ .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :5828-5833

[6] Ferromagnetic tunnel junctions with plasma-oxidized Al barriers and their annealing effects [J].

Sato, M ;

Kikuchi, H ;

Kobayashi, K .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6691-6693

[7] Temperature stability of Co/Al2O3/Co junctions [J].

Schmalhorst, J ;

Brückl, H ;

Reiss, G ;

Vieth, M ;

Gieres, G ;

Wecker, J .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :5191-5193

[8] Large tunneling magnetoresistance enhancement by thermal anneal [J].

Sousa, RC ;

Sun, JJ ;

Soares, V ;

Freitas, PP ;

Kling, A ;

da Silva, MF ;

Soares, JC .

APPLIED PHYSICS LETTERS, 1998, 73 (22) :3288-3290

[9] Oscillatory decay of magnetization induced by domain-wall stray fields [J].

Thomas, L ;

Lüning, J ;

Scholl, A ;

Nolting, F ;

Anders, S ;

Stöhr, J ;

Parkin, SSP .

PHYSICAL REVIEW LETTERS, 2000, 84 (15) :3462-3465

[10] GMR angle detector with an artificial antiferromagnetic subsystem (AAF) [J].

vandenBerg, HAM ;

Clemens, W ;

Gieres, G ;

Rupp, G ;

Vieth, M ;

Wecker, J ;

Zoll, S .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1997, 165 (1-3) :524-528