Limited Geiger-mode silicon photodiode with very high gain

被引：85

作者：

Bondarenko, G ^{[1
]}

Dolgoshein, B

Golovin, V

Ilyin, A

Klanner, R

Popova, E

机构：

[1] Moscow Engn & Phys Inst, Moscow, Russia

[2] Ctr Perspect Technol & Apparatus, Moscow, Russia

[3] DESY, D-2000 Hamburg, Germany

来源：

NUCLEAR PHYSICS B | 1998年

关键词：

D O I：

10.1016/S0920-5632(97)00585-9

中图分类号：

O412 [相对论、场论]; O572.2 [粒子物理学];

学科分类号：

摘要：

The novel type of the Silicon Photodiode - Limited Geiger-mode Photodiode (LGP) has been produced and studied. The device consists of many approximate to 10(4) mm(-2) independent cells approximate to 10 mkm size around n(+)-"pins" located between p-substrate and thin SiC layer. Very high gain more than 10(4) for 0.67 mkm wave length light source and up to 6.10(5) for single electron have been achieved. The LGP photon detection efficiency at the level of one percent has been measured.

引用

页码：347 / 352

页数：6