Photoluminescence study of lateral confinement energy in T-shaped InxGa1-xAs quantum wires

被引：16

作者：

Akiyama, H

Someya, T

Yoshita, M

Sasaki, T

Sakaki, H

机构：

[1] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 106, Japan

[2] Japan Sci & Technol Corp, Quantum Transit Project, Minato Ku, Tokyo 106, Japan

[3] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 106, Japan

[4] Univ Tokyo, Adv Sci & Technol Res Ctr, Minato Ku, Tokyo 106, Japan

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.57.3765

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A study of high-quality InxGa1-xAs T-shaped quantum wires (T-QWR's) via photoluminescence spectroscopy to characterize the lateral confinement effect is reported. The effective lateral confinement energy of excitons in 3.5-nm-scale In0.17Ga0.83As/Al0.3Ga0.7As T-QWR's is found to be as large as 34 meV. The value has been examined in comparison with the previous results on GaAs/Al0.3Ga0.7As and GaAs/AlAs T-QWR's. [S0163-1829(98)00304-X].

引用

收藏

页码：3765 / 3768

页数：4

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