Role of disorder on transport in boron-doped multiwalled carbon nanotubes

被引:36
作者
Krstic, V
Blumentritt, S
Muster, J
Roth, S
Rubio, A
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Univ Basque Country, Fac Quim, Dept Fis Mat, EHU, E-48080 Bilbao, Spain
[3] Univ Basque Country, EHU, CSIC, Ctr Mixto, E-48080 Bilbao, Spain
[4] DIPC, San Sebastian 20018, Spain
关键词
D O I
10.1103/PhysRevB.67.041401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electrical transport measurements on boron-doped multiwalled carbon nanotubes deposited on top of predefined electrode patterns have been performed. The temperature dependence of the conductance reveals through two-point configuration, the appearance of a zero-bias anomaly which was found to be not compatible with the existence of a Luttinger-liquid-like state in the doped multiwalled carbon nanotubes. The experimental findings indicate that, in order to properly interpret the charge transport properties of multiwalled carbon nanotubes, the doping as well as the energy window in which the experiments are performed are crucial points.
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页数:4
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