Anisotropic etching rates of single-crystal silicon for TMAH water solution as a function of crystallographic orientation

被引：13

作者：

Sato, K ^{[1
]}

Shikida, M ^{[1
]}

Yamashiro, T ^{[1
]}

Asaumi, K ^{[1
]}

Iriye, Y ^{[1
]}

Yamamoto, M ^{[1
]}

机构：

[1] Nagoya Univ, Chikusa Ku, Nagoya, Aichi 46401, Japan

来源：

MICRO ELECTRO MECHANICAL SYSTEMS - IEEE ELEVENTH ANNUAL INTERNATIONAL WORKSHOP PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/MEMSYS.1998.659818

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

We evaluated orientation dependence in the etching rate of single-crystal silicon for tetramethylammonium-hydroxide (TMAH) water solutions. Etching rates for a number of crystallographic orientations were measured for a wide range of etching conditions, including TMAH concentrations of 10 to 25% and temperatures of 70 to 90 degrees C. We found significantly different characteristics from those for KOH water solutions. Firstly, different types elf orientation dependence in etching rate were found around(lll) between TMAH and KOH. This means the bonding energy of the silicon crystal lattice is not a single factor that dominates orientation dependence, and there exist different etching mechanisms for the two etchants. Secondly, effects of the circulation of etchants on the etching rates were not negligible in TMAH in contrast to KOH system.

引用

页码：556 / 561

页数：2