Drilled alternating-layer structure for three-dimensional photonic crystals with a full band gap

A new three-dimensional photonic crystal structure is designed to simplify fabrication. A calculation of the band structure predicts that this photonic crystal has a complete photonic band gap in all directions. The entire three-dimensional periodic structure, except for the vertically drilled holes, is formed by automatic shaping during bias sputtering deposition. The fabrication technologies used to construct this photonic crystal are electron beam lithography, bias sputtering, and fluoride aas electron cyclotron resonance etching. Our preliminary fabrication reveals that each technology can be controlled well enough to lead to the creation of a photonic band gap material for an optical communication wavelength. (C) 2000 American Vacuum Society. [S0734-211X(00)07806-9].