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Novel shallow junction technology using decaborane (B10H14)
被引：54
作者：
Goto, K
Matsuo, J
Sugii, T
Minakata, H
Yamada, I
Hisatsugu, T
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996
|
1996年
关键词：
D O I：
10.1109/IEDM.1996.553620
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
We have developed the first ever low-energy, high-dosage boron ion implantation technology using a decaborane (B10H14) molecule. Since B10H14 consists of ten boron atoms, they are implanted with about a one-tenth lower effective acceleration energy and a ten times higher effective beam current compared with those of boron. Using this implantation, we achieved an ultra-shallow 39-nm-deep junction with 1.5 k Omega/sq. To demonstrate the effect and feasibility for semiconductor devices, we have fabricated a high-performance 0.15-mu m PMOS device with excellent resistance to short-channel effects.
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页码：435 / 438
页数：4
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