Amplifying quantum signals with the single-electron transistor

被引:352
作者
Devoret, MH [1 ]
Schoelkopf, RJ
机构
[1] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
[2] CEA Saclay, Serv Phys Etat Condense, F-91191 Gif Sur Yvette, France
关键词
D O I
10.1038/35023253
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Transistors have continuously reduced in size and increased in switching speed since their invention in 1947. The exponential pace of transistor evolution has led to a revolution in information acquisition, processing and communication technologies. And reigning over most digital applications is a single device structure - the field-effect transistor (FET). But as device dimensions approach the nanometre scale, quantum effects become increasingly important for device operation, and conceptually new transistor structures may need to be adopted. A notable example of such a structure is the single-electron transistor, or SET1-4. Although it is unlikely that SETs will replace FETs in conventional electronics, they should prove useful in ultra-low-noise analog applications. Moreover, because it is not affected by the same technological limitations as the FET, the SET can approach closely the quantum limit of sensitivity. It might also be a useful read-out device for a solid-state quantum computer.
引用
收藏
页码:1039 / 1046
页数:8
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