As-grown p-type GaN growth by dimethylhydrazine nitrogen precursor

被引：9

作者：

Park, EH ^{[1
]}

Park, JS ^{[1
]}

Yoo, TK ^{[1
]}

机构：

[1] EpiValley Co Ltd, Kwangju, Kyunggi Do, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期

关键词：

metalorganic vapor phase epitaxy; nitrides; semiconducting III-V materials; light-emitting diodes;

D O I：

10.1016/j.jcrysgro.2004.08.081

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new method for the as-grown p-type GaN layer is reported by employing dimethylhydrazine as a new nitrogen precursor. The results of SIMS and Hall-effect measurement show that the hole concentration and mobility of the as-grown p-type GaN are higher than those of the post-activated conventional p-GaN samples, with 2-3 times lower Mg concentration. Light-emitting diode device results also show better performances in optical power by 10% and reverse breakdown voltage by 20% while maintaining low V-f and I-r. The as-grown p-type layer turns out to remain as p-type after a reverse annealing under (NH3 + H-2) at 800 degreesC for 10 min, and this result is very different from the previous works. (C) 2004 Elsevier B.V. All rights reserved.

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收藏

页码：426 / 431

页数：6

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