Universal MEMS platforms for passive RF components: Suspended inductors and variable capacitors
被引:22
作者:
Fan, L
论文数: 0引用数: 0
h-index: 0
机构:
Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USAUniv Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
Fan, L
[1
]
Chen, RT
论文数: 0引用数: 0
h-index: 0
机构:
Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USAUniv Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
Chen, RT
[1
]
Nespola, A
论文数: 0引用数: 0
h-index: 0
机构:
Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USAUniv Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
Nespola, A
[1
]
Wu, MC
论文数: 0引用数: 0
h-index: 0
机构:
Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USAUniv Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
Wu, MC
[1
]
机构:
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源:
MICRO ELECTRO MECHANICAL SYSTEMS - IEEE ELEVENTH ANNUAL INTERNATIONAL WORKSHOP PROCEEDINGS
|
1998年
关键词:
D O I:
10.1109/MEMSYS.1998.659724
中图分类号:
TP [自动化技术、计算机技术];
学科分类号:
0812 ;
摘要:
We propose a universal MEMS technology platform for fabricating integrable passive components for radio frequency (RF) integrated circuits. This platform is based on a novel surface-micromachined Micro-Elevator by Self-Assembly (MESA) technique. Both high-Q inductors and variable capacitors can be realized by the MESA technology. A surface-micromachined spiral inductor that is raised by 250 mu m above the Si substrate has been experimentally demonstrated. The suspended inductor has less parasitic capacitance and substrate loss, and higher quality (Q) value and resonant frequency. The inductance of a 12.5-turn inductor is measured to be 24 nH. The results show that the self-assembled passive RF elements are suitable for monolithic integration.