Crystal growth of CuGaxIn1-xSe2 by horizontal Bridgman method

被引：15

作者：

Lam, WW ^{[1
]}

Shih, I ^{[1
]}

机构：

[1] McGill Univ, Dept Elect Engn, Montreal, PQ H3A 2A7, Canada

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1998年 / 50卷 / 1-4期

基金：

加拿大自然科学与工程研究理事会;

关键词：

single crystals; Bridgman method; lattice constants; chalcopyrite;

D O I：

10.1016/S0927-0248(97)00131-1

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Single crystals of CuGaxIn1-xSe2 were grown from stoichiometric melt by horizontal Bridgman method. An non-contact carbon coating method was used to avoid sticking between quartz ampoule and the melt. The composition variations along the as-grown ingots were studied as a function of Ga content. X-ray powder diffraction measurements were carried out to determine the lattice constants.

引用

页码：111 / 117

页数：7

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