Charge-injection-controlled organic transistor

被引:24
作者
Nakayama, K [1 ]
Fujimoto, S
Yokoyama, M
机构
[1] Osaka Univ, Grad Sch Engn, Osaka, Japan
[2] Japan Sci & Technol Corp, CREST, Suita, Osaka 565, Japan
关键词
D O I
10.1063/1.1577389
中图分类号
O59 [应用物理学];
学科分类号
摘要
A promising type of organic transistor based on the charge injection process at an organic/metal interface was proposed and demonstrated. The device was composed of an organic deposited film sandwiched between two metal electrodes, with a third stripe-shaped electrode embedded in the organic film. The output current, corresponding to the collector current, was modulated by an applied voltage on the third electrode, corresponding to the base electrode, and the current amplification factor, h(FE), exceeded 70. The operation of the device as a transistor was attributed to electron injection from the accumulation of holes supplied by the third electrode. (C) 2003 American Institute of Physics.
引用
收藏
页码:4584 / 4586
页数:3
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