Photoluminescence of exciton-polaritons in GaN

被引:15
作者
Buyanova, IA [1 ]
Bergman, JP
Monemar, B
Amano, H
Akasaki, I
机构
[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[2] Meijo Univ, Dept Elect Engn, Tempaku Ku, Nagoya, Aichi 468, Japan
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 50卷 / 1-3期
关键词
photoluminescence; exciton-polariton; phonon;
D O I
10.1016/S0921-5107(97)00150-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Temperature dependent studies of the resonant (no-phonon) and phonon-assisted radiative recombination of free excitons (FEs) in GaN are performed, and are analyzed within the polariton concept, The parameters of the exciton-phonon coupling are estimated by analyzing the thermal broadening of the no-phonon (NP) FE line. The interaction with acoustic phonons is shown to be the dominant broadening mechanism for temperatures lower than 150 K, while for higher temperatures the contribution from the interaction with optical phonons is important. Strong defect/impurity scattering of exciton-polaritons is proposed to be responsible for the revealed unusual behavior of the free A exciton in GaN, i.e, an enhanced intensity of NP FE emission in comparison with its longitudinal optical (LO) phonon replicas, as well as the narrow line shape of the I-LO assisted transitions, (C) 1997 Elsevier Science S.A.
引用
收藏
页码:130 / 133
页数:4
相关论文
共 11 条
[1]  
BUYANOVA IA, 1997, IN PRESS SOLID STATE
[2]   Excitonic emissions from hexagonal GaN epitaxial layers [J].
Chichibu, S ;
Azuhata, T ;
Sota, T ;
Nakamura, S .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) :2784-2786
[3]  
CHIM VWL, 1994, J APPL PHYS, V75, P7365
[4]   THEORY OF THE CONTRIBUTION OF EXCITONS TO THE COMPLEX DIELECTIC CONSTANT OF CRYSTALS [J].
HOPFIELD, JJ .
PHYSICAL REVIEW, 1958, 112 (05) :1555-1567
[5]  
KLOCHIKHIN AA, 1976, ZH EKSP TEOR FIZ, V44, P1176
[6]   Free exciton emission in GaN [J].
Kovalev, D ;
Averboukh, B ;
Volm, D ;
Meyer, BK ;
Amano, H ;
Akasaki, I .
PHYSICAL REVIEW B, 1996, 54 (04) :2518-2522
[7]   Optical characterisation of GaN and related materials [J].
Monemar, B ;
Bergman, JP ;
Lundstrom, T ;
Harris, CI ;
Amano, H .
SOLID-STATE ELECTRONICS, 1997, 41 (02) :181-184
[8]  
PERMOGOROV S, 1982, EXCITONS, P177
[9]   TEMPERATURE-DEPENDENT EXCITON LINEWIDTHS IN SEMICONDUCTORS [J].
RUDIN, S ;
REINECKE, TL ;
SEGALL, B .
PHYSICAL REVIEW B, 1990, 42 (17) :11218-11231
[10]   TEMPERATURE-DEPENDENCE OF INTERBAND-TRANSITIONS IN GAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
SHAN, W ;
SCHMIDT, TJ ;
YANG, XH ;
HWANG, SJ ;
SONG, JJ ;
GOLDENBERG, B .
APPLIED PHYSICS LETTERS, 1995, 66 (08) :985-987