Structural and electrical characterization of thin Bi2Te3 films grown with MBE

被引：3

作者：

Kikuchi, S ^{[1
]}

Iwata, Y ^{[1
]}

Hatta, E ^{[1
]}

Nagao, J ^{[1
]}

Mukasa, K ^{[1
]}

机构：

[1] Hokkaido Tokai Univ, Fac Engn, Sapporo, Hokkaido 005, Japan

来源：

PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 1997年

关键词：

D O I：

10.1109/ICT.1997.666983

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Thin Bi2Te3 films were grown on Al2O3(0001) substrates with molecular beam epitaxy (MBE). X-ray diffraction (XRD) was used to confirm the orientation and crystalline quality of the films, the c-axis was oriented normal to the film surface. It was found that the full width at half-maximum intensity (FWHM) of diffraction peaks in XRD pattern depends on the deposition conditions such as substrate temperature and the flux ratio. The reflection high-energy electron diffraction (RHEED) pattern of the deposited films shows a streak pattern at the initial stage of growth. Electrical resistivity, carrier concentrations and Hall mobility were measured in the temperature range from 77K to 300K. The film with narrower FWHM exhibited a lower carrier concentration (5.1 X 10(19) cm(3)) and electrically intrinsic characteristics around room temperatures. For the first time a clear separation of slopes of the Hall mobility in thin Bi2Te3 film is observed. On the other hand, the films with wider FWHM, which have higher carrier concentrations, exhibited a metallic behavior. The electrical properties are closely related to the variation of FWHM of diffraction peaks in the XRD pattern.

引用

页码：97 / 100

页数：4