A trench lateral power MOSFET using self-aligned trench bottom contact holes

被引：39

作者：

Fujishima, N ^{[1
]}

Salama, CAT ^{[1
]}

机构：

[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650399

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel Trench Lateral Power MOSFET (T-LPM) structure and its fabrication process are presented in this paper. The gate, channel, and the drift region are built on the side-wall of the trench. The process uses self-aligned trench bottom contact holes to the drain to achieve minimum pitch and very low on-resistance. A T-LPM, with 80 V breakdown voltage, has a cell pitch of 4 mu m which is about half that of the Conventional Lateral Power MOSFETs (C-LPM). The specific on-resistances for the T-LPM and C-LPM are 0.8 m Ohm-cm(2) and 1.6 m Ohm-cm(2) respectively for a 80 V breakdown.

引用

页码：359 / 362

页数：4