Calorimetric measurements of phase transformations in thin films of amorphous Te alloys used for optical data storage

被引:104
作者
Kalb, J [1 ]
Spaepen, F
Wuttig, M
机构
[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Rhein Westfal TH Aachen, Inst Phys 1, D-52056 Aachen, Germany
关键词
D O I
10.1063/1.1540227
中图分类号
O59 [应用物理学];
学科分类号
摘要
Sputtered amorphous Ag-0.055 In-0.065 Sb-0.59 Te-0.29, Ge-4 Sb-1 Te-5, and Ge-2 Sb-2 Te-5 thin films were studied by differential scanning calorimetry. The crystallization temperature and the heat of crystallization of the amorphous phases, the melting temperature and the heat of fusion of the crystalline phases, and the heat capacities of crystalline and liquid AgInSbTe were measured. The entropies of fusion are large (greater than or equal to2R), which suggests a change of bonding type between liquid and crystal. In contrast to amorphous AgInSbTe and Ge-4 Sb-1 Te-5, which upon heating crystallize to a single phase within a small temperature interval, the crystallization of amorphous Ge-2 Sb-2 Te-5 is complicated by a subsequent cubic-to-hexagonal transformation. No thermal evidence of a glass transition was found below the crystallization temperature. The ratio of the glass transition temperature (approximated as the crystallization temperature) to the liquidus temperature is 0.49-0.56, which identifies the materials as marginal glass formers. The heat capacity measurements on AgInSbTe were used to estimate the temperature dependence of the difference in enthalpy, entropy, and Gibbs free energy between the undercooled liquid and the crystal. (C) 2003 American Institute of Physics.
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页码:2389 / 2393
页数:5
相关论文
共 21 条
[1]  
Abrikosov NK, 1965, IAN SSSR NEORG MATER, V1, P204
[2]  
AKAHIRA N, 1995, P SOC PHOTO-OPT INS, V2514, P294, DOI 10.1117/12.218722
[3]   LASER-INDUCED CRYSTALLIZATION PHENOMENA IN GETE-BASED ALLOYS .1. CHARACTERIZATION OF NUCLEATION AND GROWTH [J].
COOMBS, JH ;
JONGENELIS, APJM ;
VANESSPIEKMAN, W ;
JACOBS, BAJ .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (08) :4906-4917
[4]  
DETEMPLE R, 2001, MAT RES SOC S P, V674
[5]   RAPID REVERSIBLE LIGHT-INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORS [J].
FEINLEIB, J ;
DENEUFVILLE, J ;
MOSS, SC ;
OVSHINSKY, SR .
APPLIED PHYSICS LETTERS, 1971, 18 (06) :254-+
[6]  
Heaney Seamus., 1972, Wintering Out
[7]  
HEINEN O, 2002, THESIS RHEINISCH WES
[8]   Crystallization behavior of sputter-deposited amorphous Ge2Sb2Te5 thin films [J].
Jeong, TH ;
Kim, MR ;
Seo, H ;
Kim, SJ ;
Kim, SY .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) :774-778
[9]  
KALB J, 2002, THESIS RHEINISCH WES
[10]   THE NATURE OF THE GLASSY STATE AND THE BEHAVIOR OF LIQUIDS AT LOW TEMPERATURES [J].
KAUZMANN, W .
CHEMICAL REVIEWS, 1948, 43 (02) :219-256