Preparation of layer-structured CaBi2Ta2O9 ferroelectric thin films through a triple alkoxide route

被引：15

作者：

Kato, K

Suzuki, K

Nishizawa, K

Miki, T

机构：

[1] Natl Ind Res Inst Nagoya, Kita Ku, Nagoya, Aichi 4628510, Japan

[2] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2000年 / 39卷 / 9B期

关键词：

CaBi2Ta2O9 ferroelectric thin film; triple alkoxide; crystallization behavior; ferroelectric P-E hysteresis property; dielectric property;

D O I：

10.1143/JJAP.39.5501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A triple alkoxide solution for CaBi2Ta2O9 (CBT) thin films was prepared. CBT thin films were deposited on Pt-passivated silicon and Pt-passivated quartz glass substrates. The thin films on Pt-passivated silicon crystallized to form the perovskite structure at low temperatures and showed preferred orientation along the c-axis. The thin films did not show ferroelectric P-E hysteresis loops. In contrast, the 750 degreesC-annealed thin film on Pt-passivated quartz glass showed random orientation and exhibited excellent P-E hysteresis loops. The remanent polarization (P-r) and the coercive electric field (E-c) at 13V were 6.9 muC/cm(2) and 170 kV/cm, respectively.

引用

页码：5501 / 5504

页数：4

共 15 条

[1] Formation of SrBi2Ta2O9 .1. Synthesis and characterization of a novel ''sol-gel'' solution for production of ferroelectric SrBi2Ta2O9 thin films [J].