Electrical and optical properties of nano-crystalline GaN and nano-crystalline GaN:H thin films

被引：2

作者：

Kobayashi, S ^{[1
]}

Nonomura, S ^{[1
]}

Abe, K ^{[1
]}

Gotoh, T ^{[1
]}

Hirata, S ^{[1
]}

Nitta, S ^{[1
]}

Kanemitsu, Y ^{[1
]}

机构：

[1] Gifu Univ, Fac Engn, Dept Elect & Comp Engn, Gifu 50111, Japan

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nano-crystalline GaN (nc-GaN) and hydrogenated nc-GaN (nc-GaN:H) thin films and thin film transistors (TFT) prepared by a reactive sputtering method have been studied. Hydrogen incorporation in nc-GaN film induces localized states at mid-gap energy. Thermal annealing at 400 degrees C and 600 degrees C creates mid-gap states which is detectable by electron spin resonance. Further thermal annealing treatment at 800 degrees C reduces the deep states in nc-GaN and nc-GaN:H. Photoluminescence spectra of the nc-GaN film have two broad peaks at 2.4 eV and 3.2 eV. The source-drain current voltage characteristics of the nc-GaN TFT is demonstrated for the first time. The obtained field effect mobility is 10(-4) cm(2)/V.s. Thermal annealing at 800 degrees C improves the field effect mobility to 10(-2) cm(2)/V.s.

引用

页码：373 / 378

页数：6