Redistribution of carriers in OEL devices by inserting a thin charge-carrier blocking layer

被引：6

作者：

Liang, CJ

Li, WL ^{[1
]}

Hong, ZR

Liu, XY

Peng, JB

Liu, L

Liu, ZB

Yu, JQ

Zhao, DX

Lee, ST

机构：

[1] Chinese Acad Sci, Changchun Inst Phys, Changchun 130021, Peoples R China

[2] Chinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R China

[3] City Univ Hong Kong, Dept Phys & Mat Sci, Shatin, Hong Kong

来源：

SYNTHETIC METALS | 1997年 / 91卷 / 1-3期

关键词：

organic devices; electroluminescence; Gd(AcA)(3)phen blocking layer;

D O I：

10.1016/S0379-6779(98)80040-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By inserting a thin Gd(AcA)(3)phen layer in the electroluminescent devices ITO/Alq/Al and ITO/TPD/Eu(DBM)(3)phen/Alq/Al, the quantum efficiency is increased in both devices and the emission color of the second device is changed, These results are supposed to be due to the carrier-blocking effect of the thin Gd(AcA)(3)phen layer which changes the distribution of electrons and holes in the devices, (C) 1997 Elsevier Science S.A.

引用

页码：275 / 277

页数：3

共 4 条

[1]

ADACHI C, 1988, JPN J APPL PHYS, V27, P269

[2] Effect of layered structures on the location of emissive regions in organic electroluminescent devices [J].