Crystal-orientation controlled PZT FeRAM-capacitors using rf magnetron sputtering with 12"φ single target

被引：11

作者：

Inoue, N ^{[1
]}

Maejima, Y ^{[1
]}

Hayashi, Y ^{[1
]}

机构：

[1] NEC Corp Ltd, ULSI Res Lab, Silicon Syst Res Labs, Kanagawa 22911, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Crystal-orientation control of a PZT is very important to obtain a ferroelectric capacitor with large remnant polarization. Perovskite PZT film with {100}-orientation, parallel to the polarization axis, is obtained by RF-sputtering and 600 degrees C-annealing. A metastable pyrochlore film, sputtered around 500 degrees C, is transformed to the crystal-orientated perovskite PZT film (stable phase). The PZT capacitor has large remnant polarization of 2P(r)=28 mu C/cm(2). The small capacitor, sized fi om 2 mu m square to 100 mu m square, keeps superior characteristics after Al-metallization, being applicable to a high density FeRAM memory cell.

引用

页码：605 / 608

页数：4