Electron spin coherence in semiconductors: Considerations for a spin-based solid-state quantum computer architecture

被引：126

作者：

de Sousa, R ^{[1
]}

Das Sarma, S ^{[1
]}

机构：

[1] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.67.033301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low-temperature decoherence is dominated by spin-spin interactions, through spectral diffusion and dipolar flip-flop mechanisms. These contributions lead to 1-100-mus calculated spin coherence times for a wide range of parameters, much higher than former estimates based on T-2* measurements.

引用

页数：4

共 37 条

[1]

Abragam A., 2002, PRINCIPLES NUCL MAGN

[2] ELECTRON-SPIN ECHO DECAY BEHAVIORS OF PHOSPHORUS DOPED SILICON [J].

CHIBA, M ;

HIRAI, A .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 33 (03) :730-&

[3] Effect of an inhomogeneous external magnetic field on a quantum-dot quantum computer [J].

de Sousa, R ;

Hu, XD ;

Das Sarma, S .

PHYSICAL REVIEW A, 2001, 64 (04) :423071-423079

[4] Universal quantum computation with the exchange interaction [J].

DiVincenzo, DP ;

Bacon, D ;

Kempe, J ;

Burkard, G ;

Whaley, KB .

NATURE, 2000, 408 (6810) :339-342

[5] ELECTRON-SPIN RESONANCE IN THE TWO-DIMENSIONAL ELECTRON-GAS OF GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].

DOBERS, M ;

VONKLITZING, K ;

WEIMANN, G .

PHYSICAL REVIEW B, 1988, 38 (08) :5453-5456

[6] Spin relaxation of conduction electrons in polyvalent metals: Theory and a realistic calculation [J].

Fabian, J ;

Das Sarma, S .

PHYSICAL REVIEW LETTERS, 1998, 81 (25) :5624-5627

[7] Phonon-induced spin relaxation of conduction electrons in aluminum [J].

Fabian, J ;

Das Sarma, S .

PHYSICAL REVIEW LETTERS, 1999, 83 (06) :1211-1214

[8] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .2. ELECTRON SPIN RELAXATION EFFECTS [J].

FEHER, G ;

GERE, EA .

PHYSICAL REVIEW, 1959, 114 (05) :1245-1256

[9] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].

FEHER, G .

PHYSICAL REVIEW, 1959, 114 (05) :1219-1244

[10] MICROWAVE SPIN ECHOES FROM DONOR ELECTRONS IN SILICON [J].

GORDON, JP ;

BOWERS, KD .

PHYSICAL REVIEW LETTERS, 1958, 1 (10) :368-370

← 1 2 3 4 →