Development of an EUV (13.5nm) light source employing a dense plasma focus in lithium vapor

被引:24
作者
Partlo, W [1 ]
Fomenkov, I [1 ]
Oliver, R [1 ]
Birx, D [1 ]
机构
[1] Cymer Inc, San Diego, CA 92127 USA
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES IV | 2000年 / 3997卷
关键词
EUV lithography; Dense Plasma Focus; solid state pulse power; lithium emission;
D O I
10.1117/12.390041
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Initial characterization efforts of Dense Plasma Focus (DPF) technology showed that efficient conversion of electrical energy into in-band emitted radiation could be achieved. Results previously reported showed that 25J of electrical energy can be converted into 0.38J of in-band, 13.5nm radiation emitted into 2 pi steradians. This prototype configuration demonstrated a 1.5% conversion efficiency into 2 pi sterdians, but exhibited several major drawbacks. The two greatest issues were excessively high stored energy per pulse and poor stability of the plasma size and position. Such high input energies would limit the maximum pulse repetition rate and poor plasma stability would lead to excessive electrode erosion and large integrated source size. Recent efforts have concentrated on reducing the required input energy while simultaneously improving stability. The result of these efforts is a DPF system that exhibits stable operation with as little as 1.5J of input energy and has demonstrated pulse repetition rates as high as 2500Hz. Once a stable, low input energy DPF was achieved, this prototype DPF device was fitted with a simple Lithium vapor delivery system. Pinhole camera images of the Lithium vapor source show that it is stable with a size of less than 350 mu m FWHM. In this technology's present state, the potential in-band collectable EW optical power is estimated to be 6.9W.
引用
收藏
页码:136 / 156
页数:21
相关论文
共 5 条
[1]  
BIRX D, 1999, Patent No. 5866871
[2]  
KLOSNER M, 1996, OSA TOPS EXTREME ULT, V4
[3]  
SILFVAST W, 1996, Patent No. 5499282
[4]  
ZIEMER J, 1997, 33 AIAA ASME SAE ASE
[5]  
ZIEMER J, 1997, 25 INT EL PROP C CLE