X-ray absorption at Si K-edge for novel compounds in the ternary system Si-C-N

被引：2

作者：

Kroll, P

Greiner, A

Riedel, R

Bender, S

Franke, R

Hormes, J

Pavlychev, AA

机构：

来源：

APPLICATIONS OF SYNCHROTRON RADIATION TECHNIQUES TO MATERIALS SCIENCE III | 1996年 / 437卷

关键词：

D O I：

10.1557/PROC-437-225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present results of Si K-edge XANES-investigations for novel Si-C-N containing solid phases prepared by annealing of Si(NCN)(2) at temperatures between room temperature (RT) and 1600 degrees C. The chemical equivalence of the NON-group and oxygen as a ligand of silicon is confirmed. The spectra show the presence of an intermediate crystalline phase and its decomposition. Furthermore the recrystallisation of a Si3N4/SiC composite material and its dependence on temperature can be seen.

引用

页码：225 / 229

页数：5