Selective oxidation of HipCo single-wall carbon nanotubes

被引：1

作者：

Bokova, SN ^{[1
]}

Obraztsova, ED ^{[1
]}

Osadchy, AV ^{[1
]}

Kuzmany, H ^{[1
]}

Dettlaff-Weglikowska, U ^{[1
]}

Roth, S ^{[1
]}

机构：

[1] RAS, AM Prokhorov Gen Phys Inst, Ctr Nat Sci, Moscow 119991, Russia

来源：

NANOENGINEERED NANOFIBROUS MATERIALS | 2004年 / 169卷

关键词：

D O I：

10.1007/978-1-4020-2550-1_2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure of HipCO single-wall carbon nanotubes was controlled by Raman scattering during the material heating in three ways: in a laser beam ("in situ'), in an optical oven ("in situ') and after a preliminary heating in the oven followed by Raman measurements. All experiments have demonstrated a diameter-selective oxidative etching of the smallest nanotubes (8 - 10 Angstrom) at temperatures 400 - 450 degreesC.

引用

页码：131 / 136

页数：6

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