Cleaning process strategies compatible with low-k dielectric and copper: state of the art, evolution and perspectives

被引：6

作者：

Louis, D ^{[1
]}

Beverina, A ^{[1
]}

Arvet, C ^{[1
]}

Lajoinie, E ^{[1
]}

Peyne, C ^{[1
]}

Holmes, D ^{[1
]}

Maloney, D ^{[1
]}

Lee, S ^{[1
]}

Lee, WM ^{[1
]}

机构：

[1] CEA, LETI, Grenoble 9, France

来源：

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年

关键词：

D O I：

10.1109/IITC.2000.854339

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents an analysis of interconnect cleaning for low-k / copper integration. Analytical and electrical data are combined to understand the mechanisms and efficacy of various available cleaning chemistries in the presence of Cu and organic, Si-based, and hybrid dielectrics.

引用

页码：250 / 252

页数：3