High nonlinearity of Ba0.6Sr0.4TiO3 films heteroepitaxially grown on MgO substrates

被引：117

作者：

Park, BH

Gim, Y

Fan, Y

Jia, QX

Lu, P

机构：

[1] Univ Calif Los Alamos Natl Lab, Superconduct Technol Ctr, Los Alamos, NM 87545 USA

[2] New Mexico Tech, Dept Mat Sci & Engn, Socorro, NM 87801 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 16期

关键词：

D O I：

10.1063/1.1318233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have heteroepitaxially deposited Ba0.6Sr0.4TiO3 (BST) thin films on (001)-oriented MgO substrates using pulsed-laser deposition. By optimizing the deposition temperature and adjusting the film thickness, we have successfully increased the dielectric nonlinearity and decreased the dielectric loss of BST films. BST thin films grown at 750 degrees C with a thickness of 1.1 mu m showed a dielectric constant tunability of greater than 65% and a tunability/loss of 43 at a surface electric field of 80 kV/cm at room temperature. X-ray diffraction and transmission electron microscopy analyses indicated that the tunability and dielectric loss were closely related to the crystallinity of the BST films. (C) 2000 American Institute of Physics. [S0003-6951(00)00742-7].

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页码：2587 / 2589

页数：3

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