All-additive ink-jet-printed display backplanes: Materials development and integration

被引：44

作者：

Arias, Ana C. ^{[1
]}

Daniel, Juergen ^{[1
]}

Krusor, Brent ^{[1
]}

Ready, Steve ^{[1
]}

Sholin, Veronica ^{[1
]}

Street, Robert ^{[1
]}

机构：

[1] Palo Alto Res Ctr, Elect Mat & Devices Lab, Palo Alto, CA 94070 USA

来源：

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2007年 / 15卷 / 07期

关键词：

display backplanes; organic semiconductors; TFTs; ink-jet printing;

D O I：

10.1889/1.2759554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Methods used to deposit and integrate solution-processed materials to fabricate TFT back-planes-by ink-jet printing are discussed. Thematerials studied allow the development of an all-additive process in which materials are deposited only where their functionality is required. The metal layer and semiconductor are printed, and the solution-processed dielectric is spin-coated. Silver nanoparticles are used as gate and data metals, the semiconductor used is a polythiophene derivative (PQT-12), and the gate dielectric is an epoxy-based photopolymer. The maximum processing temperature used is 150 C, making the process compatible with flexible substrates. The I-ON/I-OFF ratio was found to be about 10(5) - 10(6), and TFT mobilities of 0.04 cm(2)/V-sec were obtained. The influence of surface treatments on the size and shape of printed features is presented. It is shown that coffee-stain effects can be controlled with ink formulation and that devices show the expected pixel response.

引用

页码：485 / 490

页数：6

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