Study of a new indium sulphide derivative for buffer layer application

被引：4

作者：

Barreau, N ^{[1
]}

Marsillac, S ^{[1
]}

Bernède, JC ^{[1
]}

Deudon, C ^{[1
]}

Brohan, L ^{[1
]}

Shafarman, WN ^{[1
]}

Barreau, A ^{[1
]}

机构：

[1] LPSE FSTN, F-44322 Nantes 3, France

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190643

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thin films of beta-In2NaS3 (BINS) have been synthesized by Physical Vapour Deposition (PVD). The determination of their properties has shown that the films have an n-type electrical conductivity around 10(-6) S.cm(-1) and their optical band gap increases from 2.10 eV to 2.95 eV. These properties make the wide band gap BINS thin films potential candidates to substitute CBD-CdS in thin films CIGS-based solar cells. The first CIGS/BINS cell has reached efficiency higher than 8%, with a V-oc of 660 mV.

引用

页码：628 / 631

页数：4

共 6 条

[1] GROWTH OF IN(2)S(3) THIN-FILMS BY ATOMIC LAYER EPITAXY [J].