Investigation of the sites of dark spots in organic light-emitting devices

被引:134
作者
Liew, YF [1 ]
Aziz, H
Hu, NX
Chan, HSO
Xu, G
Popovic, Z
机构
[1] Natl Univ Singapore, Dept Mat Sci, Singapore 119260, Singapore
[2] Xerox Res Ctr Canada Ltd, Mississauga, ON L5K 2L1, Canada
[3] Natl Univ Singapore, Dept Chem, Singapore 119260, Singapore
[4] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada
关键词
D O I
10.1063/1.1320459
中图分类号
O59 [应用物理学];
学科分类号
摘要
Poor environmental stability has been a major concern for organic light-emitting devices. Exposure to ambient conditions leads to the formation of nonemissive areas (dark spots) that result in a decrease in device luminescence. Although a number of mechanisms for the formation of dark spots have been proposed, the causes underlying their initiation, and their nucleation sites are still far from being clear. In this study, optical microscopy is used to investigate the sites of dark spots of devices in which the original cathodes are peeled off and replaced by newer cathodes. Results confirm that the growth of dark spots occurs primarily due to cathode delamination. The growth of dark spots is also associated with changes in the organic layers, especially at the organic/cathode interface. Results also suggest that the nucleation of dark spots takes place at the organic/cathode interface and originates during the deposition of the cathode. On the other hand, both the anode and the hole transport layer do not appear to play a role in the formation of dark spots. (C) 2000 American Institute of Physics. [S0003-6951(00)04643-X].
引用
收藏
页码:2650 / 2652
页数:3
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