A new approach to potential fitting using neural networks

被引:32
作者
Bholoa, A. [1 ]
Kenny, S. D. [1 ]
Smith, R. [1 ]
机构
[1] Loughborough Univ Technol, Dept Math Sci, Loughborough LE11 3TU, Leics, England
关键词
neural network; tight-binding; empirical potentials;
D O I
10.1016/j.nimb.2006.11.040
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A methodology is presented for developing transferable empirical potential functions without following the usual procedure of postulating a functional form. Instead, a neural network (NN) is employed to learn the functional relationships of potential energy surfaces from the local geometric arrangement of atoms. The methodology is illustrated by training the NN model on tens of thousands of individual data points derived from the tight-binding (TB) method for a wide range of silicon systems including both small clusters and bulk structures. Comparisons of the potential's properties with experimental data, quantum methods and other Si potentials have been made. The NN model successfully fitted energy variations of the different test cases as a function of bond distances, bond angles, lattice constants and elastic properties for both equilibrium and non-equilibrium small cluster and bulk structures. This indicates a robust and consistent methodology for fitting empirical potentials which can be applied to a wide range of materials independent of the type of bonding or their crystal structure. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:1 / 7
页数:7
相关论文
共 15 条
[1]   Atomistic potentials for the molybdenum-silicon system [J].
Baskes, MI .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1999, 261 (1-2) :165-168
[2]  
BHOLOA A, 2006, THESIS LOUGHBOROUGH
[3]   DENSITY-FUNCTIONAL-BASED CONSTRUCTION OF TRANSFERABLE NONORTHOGONAL TIGHT-BINDING POTENTIALS FOR SI AND SIH [J].
FRAUENHEIM, T ;
WEICH, F ;
KOHLER, T ;
UHLMANN, S ;
POREZAG, D ;
SEIFERT, G .
PHYSICAL REVIEW B, 1995, 52 (15) :11492-11501
[4]  
Harris G.L., 1988, EMIS DATAREVIEWS SER, V4
[5]   Applications of neural networks to fitting interatomic potential functions [J].
Hobday, S ;
Smith, R ;
Belbruno, J .
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 1999, 7 (03) :397-412
[6]  
HOBDAY S, 1999, NUCL I METH B, V153, P136
[7]   Transferable atomic-type orbital basis sets for solids [J].
Kenny, SD ;
Horsfield, AP ;
Fujitani, H .
PHYSICAL REVIEW B, 2000, 62 (08) :4899-4905
[8]   STRESSES IN SEMICONDUCTORS - ABINITIO CALCULATIONS ON SI, GE, AND GAAS [J].
NIELSEN, OH ;
MARTIN, RM .
PHYSICAL REVIEW B, 1985, 32 (06) :3792-3805
[9]   COMPUTER-SIMULATION OF LOCAL ORDER IN CONDENSED PHASES OF SILICON [J].
STILLINGER, FH ;
WEBER, TA .
PHYSICAL REVIEW B, 1985, 31 (08) :5262-5271
[10]   EMPIRICAL INTERATOMIC POTENTIAL FOR SILICON WITH IMPROVED ELASTIC PROPERTIES [J].
TERSOFF, J .
PHYSICAL REVIEW B, 1988, 38 (14) :9902-9905