Aharonov-Bohm-type effects in triangular antidot lattice

被引：29

作者：

Iye, Y ^{[1
]}

Ueki, M ^{[1
]}

Endo, A ^{[1
]}

Katsumoto, S ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2004年 / 73卷 / 12期

关键词：

Aharonov-Bohm effect; antidot lattice; GaAs/AlGaAs; edge channel; decoherence;

D O I：

10.1143/JPSJ.73.3370

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Three kinds of Aharonov-Bohm (AB)-type oscillation have been investigated in triangular antidot lattice fabricated from a GaAs/AlGaAs two-dimensional electron gas sample. The oscillation periods of Altshuler-Aronov-Spivak (AAS) effect and AB-type effect near zero magnetic field are determined by the unit cell area, whereas those of AB-type oscillations in the quantum Hall plateau transition regime are governed by the effective area of antidot. The evolution of the high-field AB-type oscillation as a function of gate voltage gives information on the profile of the self-consistent potential associated with compressible edge channels formed around antidot. The temperature dependences and decoherence mechanisms of the AAS and AB-type oscillations near zero magnetic field as well as the high-field AB-type oscillation are discussed.

引用

页码：3370 / 3377

页数：8

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