Spectral characteristics of Single-In0.7Ga0.3As quantum-well microring lasers

被引：7

作者：

Corbett, B ^{[1
]}

机构：

[1] Natl Univ Ireland Univ Coll Cork, Optron Ireland, Natl Microelect Res Ctr, Cork, Ireland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 01期

关键词：

GaInAsP-InP; quantum-well device; ring laser; semiconductor lasers; spectral analysis;

D O I：

10.1109/68.651079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-threshold optically pumped microring and disk lasers containing a single compressive strained In0.7Ga0.3As quantum well are characterized, Strong bandfilling in single quantum wells is used to show saturation of the background spontaneous emission in microrings compared with comparable microdisks. The continuous wave threshold pump power for a microring is as low as 2 mu W (3 W/cm(2)) at liquid nitrogen temperatures, The lasers operate multimoded with wavelengths determined by whispering gallery modes of several orders.

引用

页码：3 / 5

页数：3

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