Extended Mapping and Exploration of the Vanadium Dioxide Stress-Temperature Phase Diagram

被引:286
作者
Cao, J. [1 ,3 ]
Gu, Y. [6 ]
Fan, W. [1 ,7 ]
Chen, L. Q. [6 ]
Ogletree, D. F. [3 ,4 ]
Chen, K. [5 ]
Tamura, N. [5 ]
Kunz, M. [5 ]
Barrett, C. [1 ,3 ]
Seidel, J. [2 ,3 ]
Wu, J. [1 ,3 ]
机构
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Mol Foundry, Berkeley, CA 94720 USA
[5] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA
[6] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[7] Univ Sci & Technol China, Dept Thermal Sci & Energy Engn, Hefei 230026, Peoples R China
基金
美国国家科学基金会;
关键词
Strain; phase transition; correlated electron nanomaterials; vanacium dioxide; mechanical strength; METAL-INSULATOR-TRANSITION; CR-DOPED VO2; THIN-FILMS; MOTT-HUBBARD; BAND THEORY; STRAIN; FERROELECTRICITY; ORGANIZATION; NANOBEAMS; NANOWIRES;
D O I
10.1021/nl101457k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Single-crystal micro- and nanomaterials often exhibit higher yield strength than their bulk counterparts This enhancement is widely recognized in structural materials but is rarely exploited to probe fundamental physics of electronic materials Vanadium dioxide exhibits coupled electronic and structural phase transitions that involve different structures existing at different strain states Full understanding of the driving mechanism of these coupled transitions necessitates concurrent structural and electrical measurements over a wide phase space Taking advantages of the superior mechanical property of micro/nanocrystals of VO2, we map and explore its stress-temperature phase diagram over a phase space that is more than an order of magnitude broader than previously attained New structural and electronic aspects were observed crossing phase boundaries at high-strain states Our work shows that the actively tuning strain in micro/nanoscale electronic materials provides an effective route to investigate their fundamental properties beyond what can be accessed in their bulk counterpart
引用
收藏
页码:2667 / 2673
页数:7
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