A study of hot-carrier degradation in n- and p-MOSFETS with ultra-thin gate oxides in the direct-tunneling regime

被引：31

作者：

Momose, HS ^{[1
]}

Nakamura, S ^{[1
]}

Ohguro, T ^{[1
]}

Yoshitomi, T ^{[1
]}

Morifuji, E ^{[1
]}

Morimoto, T ^{[1
]}

Katsumata, Y ^{[1
]}

Iwai, K ^{[1
]}

机构：

[1] Toshiba Corp, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650422

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot-carrier degradation in the direct-tunneling regime of the gate oxide was investigated under a wide range of conditions such as stress bias, oxide thickness, gate length, and channel-type dependencies for the first time. It was confirmed that n-MOSFETs with thinner gate oxides have higher hot-carrier reliability in the direct-tunneling regime from 1.5 nm to 3.8 nn. For p-MOSFETs, little degradation was observed under all conditions of stress bias, oxide thickness, and gate length. These results indicate that ultra-thin gate oxides in the direct-tunneling regime have extremely high hot-carrier reliability.

引用

页码：453 / 456

页数：4