Ultra-thin gate dielectrics: They break down, but do they fail?

被引：180

作者：

Weir, BE ^{[1
]}

Silverman, PJ ^{[1
]}

Monroe, D ^{[1
]}

Krisch, KS ^{[1
]}

Alam, MA ^{[1
]}

Alers, GB ^{[1
]}

Sorsch, TW ^{[1
]}

Timp, GL ^{[1
]}

Baumann, F ^{[1
]}

Liu, CT ^{[1
]}

Ma, Y ^{[1
]}

Hwang, D ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.649463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study breakdown in high-quality 2-7nm gate dielectrics, and find that soft breakdown becomes more likely for thinner oxides and for oxides stressed at lower voltages. For 2nm oxides, an increase in gate noise is the only precise indication of soft breakdown. For many applications, devices should remain functional with the level of gate noise we have observed, after soft breakdown.

引用

页码：73 / 76

页数：4