Preparation and characterization of electrodeposited CuInSe2 thin films

被引:7
作者
Fahoume, M
Chraibi, F
Aggour, M
Ennaoui, A
机构
[1] Univ Mohammed V, Fac Sci, Lab Phys Materiaux, Rabat, Morocco
[2] Univ Ibn Tofail, Fac Sci, LPMC, Kenitra 14000, Morocco
来源
ANNALES DE CHIMIE-SCIENCE DES MATERIAUX | 1998年 / 23卷 / 1-2期
关键词
D O I
10.1016/S0151-9107(98)80095-0
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The ternary Cu-In-Se system was prepared from an aqueous solution containing CuCl2, InCl3, H2SeO3 complexed by citrate (Na3C6H5O7) The kinetics of electrodeposition were studied by using the rotating disk electrode method (RDE). X-ray diffraction showed the formation of CuInSe2 films, of chalcopyrite structure, at potentials ranged between -0.95 V and -1.12 V (vs.SSE). The composition of the deposited films was studied by energy dispersive analysis of X-rays (EDAX) and Rutherford backscattering spectroscopy (RES). From the results, it was found that stoichiometric chalcopyrite CuInSe2 was obtained by controlling bath composition, deposition potential, solution temperature and pH.
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页码:373 / 376
页数:4
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