Thermoelectric properties of Sn-filled skutterudites

被引:160
作者
Nolas, GS
Takizawa, H
Endo, T
Sellinschegg, H
Johnson, DC
机构
[1] Marlow Ind Inc, Div Res & Dev, Dallas, TX 75238 USA
[2] Tohoku Univ, Dept Chem Mat, Sendai, Miyagi 9808579, Japan
[3] Univ Oregon, Dept Chem, Eugene, OR 97403 USA
[4] Univ Oregon, Inst Mat Sci, Eugene, OR 97403 USA
关键词
D O I
10.1063/1.126874
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thermal conductivity, resistivity, Seebeck coefficient, and structure measurements of CoSb3 with tin interstitially placed in the voids are reported. These tin-filled skutterudites were synthesized under high pressure and temperature conditions; they cannot be synthesized under "normal" synthesis approaches. The tin atoms exhibit very large atomic displacement parameters indicating a large "rattling" motion inside their atomic "cages." The disorder induced by the Sn atoms is a very good phonon scattering mechanism. The thermal conductivity of these compounds is very low with a temperature dependence that is atypical of simple solids. The tin-filled compounds exhibit n-type semiconducting behavior with relatively high Seebeck coefficients for compounds whose electronic properties have not been optimized. The potential for thermoelectric applications is discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)02527-4].
引用
收藏
页码:52 / 54
页数:3
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