Realization and optical characterization of etched mirror facets in GaN cavities

被引：28

作者：

Binet, F

Duboz, JY

Laurent, N

Bonnat, C

Collot, P

Hanauer, F

Briot, O

Aulombard, RL

机构：

[1] Thomson CSF, LCR, F-91404 Orsay, France

[2] Univ Montpellier 2, CNRS, GES, F-34095 Montpellier 3, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 08期

关键词：

D O I：

10.1063/1.120934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the realization of etched mirror facets in GaN cavities by chemically assisted ion-beam etching. The etching conditions are adjusted to obtain a high degree of verticality and smoothness. Optical pumping experiments and gain measurements are performed in etched GaN cavities of various geometries. Stimulated emission and lasing are observed. The study of the value of the gain at threshold as a function of the cavity length allows a determination of the reflection coefficient of the etched mirror. The measured value of 15% is in good agreement with the one expected for a perfect air-GaN interface. This demonstrates the high quality of the etched mirror facets. (C) 1998 American Institute of Physics.

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页码：960 / 962

页数：3

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