Minimization of passive circuits losses realized on low resistivity silicon using micro-machining techniques and thick polymer layers

被引：9

作者：

Bouchriha, F ^{[1
]}

Grenier, K ^{[1
]}

Dubuc, D ^{[1
]}

Pons, P ^{[1
]}

Plana, R ^{[1
]}

Graffeuil, J ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse 4, France

来源：

2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年

关键词：

D O I：

10.1109/MWSYM.2003.1212528

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a novel technological solution using both silicon surface micromachining and thick polymer layer deposition on low resistivity silicon substrate (20 Omega.cm) has been investigated. The proposed structure achieves both a low attenuation level and a high quality factor. The silicon etching into the coplanar slots leads indeed to a noticeable decrease of the losses, whereas filling the gaps with the polymer BCB avoids a degradation of the effective permittivity.

引用

收藏

页码：959 / 962

页数：4

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