Sub-half micron electroless Cu metallization

被引：6

作者：

Dubin, VM

ShachamDiamand, Y

Zhao, B

Vasudev, PK

Ting, CH

机构：

来源：

ADVANCED METALLIZATION FOR FUTURE ULSI | 1996年 / 427卷

关键词：

D O I：

10.1557/PROC-427-179

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electroless Cu metallization has been fabricated by blanket electroless Cu deposition into the trenches in SiO2 dilectric layer on sputtered Cu seed layer with Ta diffusion layer and Al protection layer. Chemical-mechanical polishing of copper has been used to planarize the structure. Selective electroless CoWP layer has been deposited to protect inlaid Cu metallization.

引用

页码：179 / 184

页数：6