Atomic layer deposition of WxN/TiN and WNxCy/TiN nanolaminates

被引：39

作者：

Elers, KE

Saanila, V

Li, WM

Soininen, PJ

Kostamo, JT

Haukka, S

Juhanoja, J

Besling, WFA

机构：

[1] ASM Amer Ltd, NW Serv Off, Hillsboro, OR USA

[2] ASM Microchem Ltd, FIN-02631 Espoo, Finland

来源：

THIN SOLID FILMS | 2003年 / 434卷 / 1-2期

关键词：

atomic layer deposition; titanium nitride; tungsten nitride; diffusion barrier;

D O I：

10.1016/S0040-6090(03)00501-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diffusion barrier materials, such as TiN, WxN, WNxCy, and their nanolaminates were deposited by atomic layer deposition method. TiN film exhibited excellent properties, but WxN film exhibited high resistivity despite the low residue concentration. Both TiN and WxN films suffered from serious incompatibility with the copper metal. WNxCy film was deposited by introducing triethylboron as a reducing agent for tungsten. Excellent film properties were obtained, including very good compatibility with the copper metal, evident as strong adhesion and no pitting on the copper surface. Nanolaminate barrier stacks of WxN/TiN and WNxCy/TiN were successfully deposited. TiN deposition did not cause copper pitting when thin WNxCy. film was deposited underneath. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：94 / 99

页数：6

共 14 条

[1] NBCL(S) AS A PRECURSOR IN ATOMIC LAYER EPITAXY [J].