Threshold photodetachment of Al-:: Electron affinity and fine structure

被引:47
作者
Scheer, M [1 ]
Bilodeau, RC
Thogersen, J
Haugen, HK
机构
[1] McMaster Univ, Dept Phys & Astron, Hamilton, ON L8S 4M1, Canada
[2] McMaster Univ, Brockhouse Inst Mat Res, Dept Engn Phys, Hamilton, ON L8S 4M1, Canada
[3] McMaster Univ, Ctr Electrophoton Mat & Devices, Hamilton, ON L8S 4M1, Canada
来源
PHYSICAL REVIEW A | 1998年 / 57卷 / 03期
关键词
D O I
10.1103/PhysRevA.57.R1493
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Tunable infrared laser spectroscopy of Al- (3p(2 3)P(J)) has yielded an improved value for the electron affinity of aluminum and experimental data on the previously unobserved fine structure of the ionic ground state. The electron affinity is determined to be 3491.0(4) cm(-1) [432.83(5) meV], and the J = 0-1 and J = 1-2 splittings are found to be 22.7(3) and 45.7(2) cm(-1), respectively. The result for the electron affinity is in substantial disagreement with a very recent experimental investigation. Our work also indicates that isoelectronic extrapolations for the ionic fine structure were accurate within uncertainties, and is in good agreement with recent calculations of the electron affinity. [S1050-2947(97)50512-9].
引用
收藏
页码:R1493 / R1496
页数:4
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