Interaction between a monovacancy and a vacancy cluster in silicon

被引:34
作者
Bongiorno, A
Colombo, L
机构
[1] Ist Nazl Fis Mat, I-20126 Milan, Italy
[2] Univ Milan, Dipartimento Sci Mat, I-20126 Milan, Italy
来源
PHYSICAL REVIEW B | 1998年 / 57卷 / 15期
关键词
D O I
10.1103/PhysRevB.57.8767
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The interaction between two vacancies has been investigated in silicon by molecular-dynamics simulations. We introduce the concept of capture radius r(c), according to which the most stable configuration for a vacancy pair is a bound divacancy whenever the two defects are placed at distances smaller than r(c). We also investigate the trapping mechanism of a monovacancy at a vacancy complex and discuss the energetics of early stages of aggregation of small vacancy clusters. [S0163-1829(98)04012-0].
引用
收藏
页码:8767 / 8769
页数:3
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