Charge dissipation on chemically treated thin silicon oxide in air

被引：5

作者：

Uchihashi, T ^{[1
]}

Nakano, A

Ida, T

Andoh, Y

Kaneko, R

Sugawara, Y

Morita, S

机构：

[1] Hiroshima Univ, Fac Sci, Dept Phys, Higashihiroshima 739, Japan

[2] Sharp Co Ltd, IC Grp, VLSI Dev Labs, Tenri, Nara 632, Japan

[3] NTT Corp, Integrated Informat & Energy Syst Lab, Musashino, Tokyo 180, Japan

[4] Wakayama Univ, Fac Syst Engn, Dept Optomechatron, Wakayama 640, Japan

[5] Osaka Univ, Fac Engn, Dept Elect Engn, Suita, Osaka 565, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 6A期

关键词：

trimethylsilyl organosilane monolayer; TMS; chemical treatment; charge dissipation; contact electrification; thin silicon oxide; charge storage; atomic force microscope;

D O I：

10.1143/JJAP.36.3755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the microscopic charge dissipation of densely contact-electrified charges on silicon oxides with and without a trimethylsilyl (TMS) organosilane monolayer using a modified atomic force microscope in air. Here. the TMS film was used to change a hydrophilic surface to a hydrophobic one. As a result, for both of the deposited negative and positive charges, it was clarified that the TMS film can suppress the rapid dissipation induced by surface diffusion. For the positive charge, however the TMS film enhanced the charge dissipation induced by recombination through the TMS film and silicon oxide.

引用

页码：3755 / 3758

页数：4

共 14 条

[1] ATOMIC FORCE MICROSCOPY USING OPTICAL INTERFEROMETRY [J].

ERLANDSSON, R ;

MCCLELLAND, GM ;

MATE, CM ;

CHIANG, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02) :266-270

[2] Phase transition of contact-electrified negative charges on a thin silicon oxide in air [J].

Fukano, Y ;

Sugawara, Y ;

Uchihashi, T ;

Okusako, T ;

Morita, S ;

Yamanishi, Y ;

Oasa, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (4A) :2394-2401

[3] Charge injection and extraction on organic dot structures by atomic force microscopy [J].

Hieda, H ;

Tanaka, K ;

Gemma, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (02) :1234-1237

[4] HIGH-RESOLUTION CAPACITANCE MEASUREMENT AND POTENTIOMETRY BY FORCE MICROSCOPY [J].

MARTIN, Y ;

ABRAHAM, DW ;

WICKRAMASINGHE, HK .

APPLIED PHYSICS LETTERS, 1988, 52 (13) :1103-1105

[5] DISSIPATION OF CONTACT-ELECTRIFIED CHARGE ON THIN SI-OXIDE STUDIED BY ATOMIC-FORCE MICROSCOPY [J].

MORITA, S ;

FUKANO, Y ;

UCHIHASHI, T ;

SUGAWARA, Y ;

YAMANISHI, Y ;

OASA, T .

APPLIED SURFACE SCIENCE, 1994, 75 :151-156

[6] REPRODUCIBLE AND CONTROLLABLE CONTACT ELECTRIFICATION ON A THIN INSULATOR [J].

MORITA, S ;

FUKANO, Y ;

UCHIHASHI, T ;

OKUSAKO, T ;

SUGAWARA, Y ;

YAMANISHI, Y ;

OASA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (11B) :L1701-L1703

[7] ELECTROSTATIC WRITING AND IMAGING USING A FORCE MICROSCOPE [J].

SAURENBACH, F ;

TERRIS, BD .

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 1992, 28 (01) :256-260

[8] CHARGE FLOW DURING METAL-INSULATOR CONTACT [J].

SCHONENBERGER, C .

PHYSICAL REVIEW B, 1992, 45 (07) :3861-3864

[9] DEPOSITION AND IMAGING OF LOCALIZED CHARGE ON INSULATOR SURFACES USING A FORCE MICROSCOPE [J].

STERN, JE ;

TERRIS, BD ;

MAMIN, HJ ;

RUGAR, D .

APPLIED PHYSICS LETTERS, 1988, 53 (26) :2717-2719

[10] Density saturation of densely contact-electrified negative charges on a thin silicon oxide sample due to the Coulomb repulsive force [J].

Sugawara, Y ;

Tsuyuguchi, T ;

Uchihashi, T ;

Okusako, T ;

Fukano, Y ;

Yamanishi, Y ;

Oasa, T ;

Morita, S .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1996, 74 (05) :1339-1346

← 1 2 →