Light-output enhancement in a nitride-based light-emitting diode with 22° undercut sidewalls

被引：84

作者：

Kao, CC ^{[1
]}

Kuo, HC

Huang, HW

Chu, JT

Peng, YC

Hsieh, YL

Luo, CY

Wang, SC

Yu, CC

Lin, CF

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[2] Global Union Technol Corp, Hsinchu 300, Taiwan

[3] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 400, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 01期

关键词：

etching profile; GaN; light-emitting diode (LED); light extraction efficiency;

D O I：

10.1109/LPT.2004.837480

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We successfully fabricated nitride-based light-emitting diodes (LEDs) with similar to 22degrees undercut sidewalls. The similar to 22degrees etching undercut sidewalls were achieved by controllable inductively coupled plasma reactive ion etching. With a 20-mA current injection, the output powers of the LED with similar to 22degrees undercut sidewalls and standard LED were 5.1 and 3 mW, respectively-a factor of 1.7 times enhancement. It was found that such undercut sidewalls could enhance the probability of escaping the photons outside from the LED in the near horizontal and in-plane directions. This simple and controllable method is beneficial to fabricate brighter LEDs.

引用

页码：19 / 21

页数：3

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